IRLR2705TR

new-10%

Manufacturer part number:IRLR2705TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 28A DPAK

Case Package:SOT-23

Datasheet:IRLR2705TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	68W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 5V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	28A
Drain-source On Resistance-Max	0.051Ohm
Pulsed Drain Current-Max (IDM)	110A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	110 mJ
RoHS Status	Non-RoHS Compliant