NTD80N02T4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NTD80N02T4G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
24V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
80A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
75W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
75W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 20V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
42nC @ 4.5V
Rise Time
67ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
28 ns
Continuous Drain Current (ID)
80A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0058Ohm
Drain to Source Breakdown Voltage
24V
Pulsed Drain Current-Max (IDM)
200A
Avalanche Energy Rating (Eas)
733 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
NTD80N02T4G Product Details
NTD80N02T4G Description
NTD80N02T4G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 24V. The operating temperature of the NTD80N02T4G is -55°C~150°C TJ and its maximum power dissipation is 75W Tc. NTD80N02T4G is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.