IRFI530G

new-10%

Manufacturer part number:IRFI530G

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 9.7A TO220FP

Case Package:SOT-23

Datasheet:IRFI530G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Supplier Device Package	TO-220-3
Weight	6.000006g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2017
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	42W Tc
Element Configuration	Single
Power Dissipation	42W
Turn On Delay Time	8.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	160mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	670pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.7A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Rise Time	28ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	9.7A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	670pF
Drain to Source Resistance	160mOhm
Rds On Max	160 mΩ
Height	9.8mm
Length	10.63mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant