NTDV20P06LT4G

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Manufacturer part number:NTDV20P06LT4G

Manufacturer:ON Semiconductor

Description:NTDV20P06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTDV20P06LT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	LIFETIME (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	150MOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	65W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 7.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15.5A Ta
Gate Charge (Qg) (Max) @ Vgs	26nC @ 5V
Rise Time	90ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	15.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	50A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free