NTDV3055L104-1G

new-10%

Manufacturer part number:NTDV3055L104-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 12A IPAK

Case Package:SOT-23

Datasheet:NTDV3055L104-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	1.5W Ta 48W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Continuous Drain Current (ID)	12A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	61 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free