NTGD4167CT1G

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Manufacturer part number:NTGD4167CT1G

Manufacturer:ON Semiconductor

Description:NTGD4167CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTGD4167CT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	90MOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	900mW
Terminal Form	GULL WING
Base Part Number	NTGD4167C
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	8 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 2.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	295pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.6A 1.9A
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 4.5V
Rise Time	8ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	8 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	2.6A
Threshold Voltage	900mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1mm
Length	3.1mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free