DMG6898LSD-13

new-10%

Manufacturer part number:DMG6898LSD-13

Manufacturer:Diodes Incorporated

Description:MOSFET MOSFET N-CHAN

Case Package:SOT-23

Datasheet:DMG6898LSD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ESD PROTECTED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	1.28W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMG6898LSD
Pin Count	8
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.28W
Turn On Delay Time	11.67 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1149pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	12.49ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	12.33 ns
Turn-Off Delay Time	35.89 ns
Continuous Drain Current (ID)	9.5A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.016Ohm
Pulsed Drain Current-Max (IDM)	30A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	4.95mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free