DMN2028UFDH-7

new-10%

Manufacturer part number:DMN2028UFDH-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 20V 6.8A POWERDI

Case Package:SOT-23

Datasheet:DMN2028UFDH-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	1.1W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	53 ns
FET Type	2 N-Channel (Dual) Common Drain
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	151pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 4.5V
Rise Time	77ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	234 ns
Turn-Off Delay Time	561 ns
Continuous Drain Current (ID)	6.8A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.036Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	40A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	800μm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant