NTGS3446T1

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Manufacturer part number:NTGS3446T1

Manufacturer:ON Semiconductor

Description:NTGS3446T1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTGS3446T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn80Pb20)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	5.1A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	2.5A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	5.8A
Drain-source On Resistance-Max	0.045Ohm
Drain to Source Breakdown Voltage	20V
Feedback Cap-Max (Crss)	100 pF
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead