NTH4L040N65S3F

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Manufacturer part number:NTH4L040N65S3F

Manufacturer:ON Semiconductor

Description:FET 650V 65A TO247AD

Case Package:SOT-23

Datasheet:NTH4L040N65S3F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-4
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Series	FRFET®, SuperFET® III
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
JESD-30 Code	R-PSFM-T4
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	446W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 32.5A, 10V
Vgs(th) (Max) @ Id	5V @ 2.1mA
Input Capacitance (Ciss) (Max) @ Vds	5940pF @ 400V
Current - Continuous Drain (Id) @ 25°C	65A Tc
Gate Charge (Qg) (Max) @ Vgs	158nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	65A
Drain-source On Resistance-Max	0.04Ohm
Pulsed Drain Current-Max (IDM)	162.5A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	1009 mJ
RoHS Status	Non-RoHS Compliant