STW21N150K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STW21N150K5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ K5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW21N
Power Dissipation-Max
446W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
900m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
3145pF @ 100V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
89nC @ 10V
Drain to Source Voltage (Vdss)
1500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
14A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$17.48000
$17.48
30
$14.90767
$447.2301
120
$13.80200
$1656.24
510
$11.95951
$6099.3501
STW21N150K5 Product Details
STW21N150K5 Description
STW21N150K5 is a very high voltage, N-channel Power MOSFET, which uses MDmeshTM K5 technology based on a proprietary vertical structure. As a result, the on-resistance is reduced dramatically and the gate charge is ultra-low, making this device suitable for applications that require high efficiency and power density.