IPA50R280CE datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPA50R280CE Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2008
Series
CoolMOS™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
30.4W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
280m Ω @ 4.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds
773pF @ 100V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
32.6nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
13V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain-source On Resistance-Max
0.28Ohm
Pulsed Drain Current-Max (IDM)
42.9A
DS Breakdown Voltage-Min
500V
Avalanche Energy Rating (Eas)
231 mJ
FET Feature
Super Junction
RoHS Status
RoHS Compliant
IPA50R280CE Product Details
IPA50R280CE Description
IPA50R280CE is a type of CoolMOS? CE power transistor provided by Infineon Technologies based on the super junction(SJ) principle and pioneered by Infineon Technologies. It is specifically designed to meet the highest efficiency standards for cost-sensitive applications in Consumer and Lighting markets. It provides all benefits of a fast switching Superjunction MOSFET while featuring ease of use and offering the best cost-down performance ratio available on the market.