IRF6644TR1

new-10%

Manufacturer part number:IRF6644TR1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V DIRECTFET-MN

Case Package:SOT-23

Datasheet:IRF6644TR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
Additional Feature	LOW CONDUCTION LOSS
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id	4.8V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10.3A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	10A
Drain-source On Resistance-Max	0.013Ohm
Pulsed Drain Current-Max (IDM)	228A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	86 mJ
RoHS Status	Non-RoHS Compliant