NTHD3102CT1G

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NTHD3102CT1G

Manufacturer part number:NTHD3102CT1G

Manufacturer:ON Semiconductor

Description:NTHD3102CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTHD3102CT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Surface Mount	YES
Number of Pins	8
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	20V
Max Power Dissipation	600mW
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	5.5A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTHD3102C
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600mW
Turn On Delay Time	7.2 ns
Power - Max	1.1W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A 3.1A
Gate Charge (Qg) (Max) @ Vgs	7.9nC @ 4.5V
Rise Time	16.9ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	16.9 ns
Turn-Off Delay Time	15.7 ns
Continuous Drain Current (ID)	5.5A
Threshold Voltage	400mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.045Ohm
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	16A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.1mm
Length	3.1mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free