FDC6302P

new-10%

Manufacturer part number:FDC6302P

Manufacturer:ON Semiconductor

Description:MOSFET SSOT-6 P-CH -25V

Case Package:SOT-23

Datasheet:FDC6302P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-25V
Max Power Dissipation	900mW
Terminal Form	GULL WING
Current Rating	-120mA
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	900mW
Turn On Delay Time	5 ns
Power - Max	700mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11pF @ 10V
Current - Continuous Drain (Id) @ 25°C	120mA
Gate Charge (Qg) (Max) @ Vgs	0.31nC @ 4.5V
Rise Time	8ns
Drain to Source Voltage (Vdss)	25V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	9 ns
Continuous Drain Current (ID)	-120mA
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-25V
Dual Supply Voltage	-25V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	-1 V
Height	1.12mm
Length	3mm
Width	1.68mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free