SI4564DY-T1-GE3

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SI4564DY-T1-GE3

Manufacturer part number:SI4564DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 40V 10A 8SOIC

Case Package:SOT-23

Datasheet:SI4564DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	21mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	3.2W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI4564
Pin Count	8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	42 ns
Power - Max	3.1W 3.2W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17.5m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	855pF @ 20V
Current - Continuous Drain (Id) @ 25°C	10A 9.2A
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	40V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	15 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
DS Breakdown Voltage-Min	40V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	800 mV
Height	1.75mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free