NTHD3133PFT1G

new-10%

Manufacturer part number:NTHD3133PFT1G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 3.2A CHIPFET

Case Package:SOT-23

Datasheet:NTHD3133PFT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	5.8 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	680pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.2A Tj
Gate Charge (Qg) (Max) @ Vgs	7.4nC @ 4.5V
Rise Time	11.7ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	11.7 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	-4.4A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	3.2A
Drain to Source Breakdown Voltage	20V
FET Feature	Schottky Diode (Isolated)
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free