NTHS2101PT1

new-10%

Manufacturer part number:NTHS2101PT1

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 8V 5.4A CHIPFET

Case Package:SOT-23

Datasheet:NTHS2101PT1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 14 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-8V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	-5.4A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.3W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 6.4V
Current - Continuous Drain (Id) @ 25°C	5.4A Tj
Gate Charge (Qg) (Max) @ Vgs	30nC @ 4.5V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	73 ns
Continuous Drain Current (ID)	5.4A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	-8V
Pulsed Drain Current-Max (IDM)	7.5A
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead