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NTHS2101PT1G

NTHS2101PT1G

NTHS2101PT1G

ON Semiconductor

NTHS2101PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTHS2101PT1G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 14 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -8V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating -5.4A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 6.4V
Current - Continuous Drain (Id) @ 25°C 5.4A Tj
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Rise Time 28ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -8V
Nominal Vgs -450 mV
RoHS Status RoHS Compliant
Lead Free Lead Free
NTHS2101PT1G Product Details

NTHS2101PT1G MAXIMUM RATINGS

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.


NTHS2101PT1G Features

Offers an Ultra Low RDS(on) Solution in the ChipFET Package

Miniature ChipFET Package 40% Smaller Footprint than TSOP?6

making it an Ideal Device for Applications where Board Space is at a

Premium

Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin

Environments such as Portable Electronics

Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the

Operating Voltage used in many Logic ICs in Portable Electronics

Simplifies Circuit Design since Additional Boost Circuits for Gate

Voltages are not Required

Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels using the same Basic Topology

Pb?Free Package is Available


NTHS2101PT1G Applications

Optimized for Battery and Load Management Applications in

Portable Equipment such as MP3 Players, Cell Phones, Digital

Cameras, Personal Digital Assistant and other Portable Applications

Charge Control in Battery Chargers

Buck and Boost Converters


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