NTJD1155LT1G Description

The NTJD1155LT1G is a P and N-channel Power MOSFET particularly suited for portable electronic equipment's where low control signals, low battery voltages and high load currents are needed. The P-channel device is specifically designed as a load switch using state-of-the-art Trench technology. The N-channel, with an external resistor (R1), functions as a level-shift to drive the P-channel. The N-channel MOSFET has internal ESD protection and it can be driven by logic signals as low as 1.5V. The NTJD1155L operates on supply lines from 1.8 to 8V and can drive loads up to 1.3A with 8V applied to both VIN and VON/OFF.
NTJD1155LT1G Features

1.5 to 8V ON/OFF range
Low profile, small footprint package
-55 to 150°C Operating junction temperature range
Extremely low RDS (ON) P-channel load switch MOSFET
Level shift MOSFET is ESD protected

NTJD1155LT1G Applications

Portable Devices, Industrial
Cell Phones
Digital Cameras
PDAs
Media Players
Power Management,