US6M1TR

new-10%

Manufacturer part number:US6M1TR

Manufacturer:ROHM Semiconductor

Description:MOSFET N/P-CH 30V/20V TUMT6

Case Package:SOT-23

Datasheet:US6M1TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	280MOhm
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	Other Transistors
Max Power Dissipation	1W
Peak Reflow Temperature (Cel)	260
Current Rating	1.4A
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	6M1
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.4A 1A
Gate Charge (Qg) (Max) @ Vgs	2nC @ 5V
Rise Time	8ns
Drain to Source Voltage (Vdss)	30V 20V
Polarity/Channel Type	N-CHANNEL
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	-12V
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	2.5 V
Height	770μm
Length	2mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free