DMG4822SSD-13

new-10%

Manufacturer part number:DMG4822SSD-13

Manufacturer:Diodes Incorporated

Description:MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K

Case Package:SOT-23

Datasheet:DMG4822SSD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	1.42W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMG4822
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.42W
Turn On Delay Time	2.9 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	478.9pF @ 16V
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 10V
Rise Time	7.9ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	3.1 ns
Turn-Off Delay Time	14.6 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	60A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	4.95mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free