TC2320TG-G

new-10%

Manufacturer part number:TC2320TG-G

Manufacturer:Microchip Technology

Description:Mosfet, N And P Channel, 200V , 8 SOIC 3.90MM(.150IN) T/r

Case Package:SOT-23

Datasheet:TC2320TG-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	3 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	LOW THRESHOLD
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 25V
Rise Time	15ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	7Ohm
Drain to Source Breakdown Voltage	200V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.65mm
Length	4.9mm
Width	3.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant