DMN2008LFU-7

new-10%

Manufacturer part number:DMN2008LFU-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CHA 20V 14.5A DFN2030

Case Package:SOT-23

Datasheet:DMN2008LFU-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UFDFN Exposed Pad
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation	1W
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Configuration	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	1W
FET Type	2 N-Channel (Dual) Common Drain
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.4m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250A
Input Capacitance (Ciss) (Max) @ Vds	1418pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	42.3nC @ 10V
Drain to Source Voltage (Vdss)	20V
Continuous Drain Current (ID)	14.5A
Drain-source On Resistance-Max	0.0096Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant