NTMD4N03R2G Description
The half-dual N-channel power MOSFET NTMD4N03R2G is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.
NTMD4N03R2G Features
? Designed for use in low voltage, high speed switching applications
? Ultra Low On?Resistance Provides
Higher Efficiency and Extends Battery Life
? RDS(on) = 0.048 , VGS = 10 V (Typ)
? RDS(on) = 0.065 , VGS = 4.5 V (Typ)
? Miniature SO?8 Surface Mount Package ? Saves Board Space
? Diode is Characterized for Use in Bridge Circuits
? Diode Exhibits High Speed, with Soft Recovery
? NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable*
? These Devices are Pb?Free and are RoHS Compliant
NTMD4N03R2G Applications
? DC?DC Converters
? Computers
? Printers
? Cellular and Cordless Phones
? Disk Drives and Tape Drives
