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NTMD5838NLR2G

NTMD5838NLR2G

NTMD5838NLR2G

ON Semiconductor

NTMD5838NLR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTMD5838NLR2G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 52 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 2.1W
Terminal Form GULL WING
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 11 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 7.4A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 35A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.25680 $0.5136
5,000 $0.23909 $1.19545
12,500 $0.23023 $2.76276
25,000 $0.22540 $5.635
NTMD5838NLR2G Product Details

NTMD5838NLR2G         Description


  The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.

 

NTMD5838NLR2G     Features


? Low RDS(on)

? Low Capacitance

? Optimized Gate Charge

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant

 

NTMD5838NLR2G              Applications

DC-DC converters

System voltage rails

Point-of-load

 





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