NTMD5838NLR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
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NTMD5838NLR2G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
52 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Max Power Dissipation
2.1W
Terminal Form
GULL WING
Pin Count
8
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.1W
Turn On Delay Time
11 ns
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
25m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
785pF @ 20V
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Rise Time
23ns
Drain to Source Voltage (Vdss)
40V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
7.4A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
35A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NTMD5838NLR2G Product Details
NTMD5838NLR2G Description
The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.
NTMD5838NLR2G Features
? Low RDS(on)
? Low Capacitance
? Optimized Gate Charge
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS