NTMFS4839NHT1G

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Manufacturer part number:NTMFS4839NHT1G

Manufacturer:ON Semiconductor

Description:MOSFET NFET S08FL 30V 66A 5.5mOhm

Case Package:SOT-23

Datasheet:NTMFS4839NHT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PDSO-F6
Number of Elements	1
Power Dissipation-Max	870mW Ta 42.4W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.7W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2354pF @ 12V
Current - Continuous Drain (Id) @ 25°C	9.5A Ta 64A Tc
Gate Charge (Qg) (Max) @ Vgs	43.5nC @ 11.5V
Rise Time	19.6ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Fall Time (Typ)	3.4 ns
Turn-Off Delay Time	23.2 ns
Continuous Drain Current (ID)	64A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	15A
Drain-source On Resistance-Max	0.0103Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	192A
Avalanche Energy Rating (Eas)	109 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant