IXFT30N50Q3

new-10%

Manufacturer part number:IXFT30N50Q3

Manufacturer:IXYS

Description:MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A

Case Package:SOT-23

Datasheet:IXFT30N50Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	690W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	690W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	250ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.2Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	90A
Avalanche Energy Rating (Eas)	1500 mJ
Height	5.1mm
Length	16.05mm
Width	14mm
RoHS Status	ROHS3 Compliant