NTK3043NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTK3043NT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-723
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.4Ohm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
225mA
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Power Dissipation-Max
310mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
440mW
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.4 Ω @ 10mA, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
11pF @ 10V
Current - Continuous Drain (Id) @ 25°C
210mA Ta
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
1.65V 4.5V
Vgs (Max)
±10V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
94 ns
Continuous Drain Current (ID)
285mA
Threshold Voltage
400mV
Gate to Source Voltage (Vgs)
10V
Drain Current-Max (Abs) (ID)
0.255A
Drain to Source Breakdown Voltage
20V
Height
550μm
Length
1.25mm
Width
850μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NTK3043NT1G Product Details
NTK3043NT1G Description
These N-Channel enhancement mode power field effect transistors are made using Fairchild's proprietary planar stripe DMOS technology. This unique technology has been specially optimized to minimize on-state resistance, increase switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are suited for high-efficiency switching DC/DC converters and switch mode power supply.
NTK3043NT1G Features
? Allows for the production of high-density PCBs
? Footprint is 44 percent smaller and 38 percent thinner than SC89.
? This device's low voltage drive makes it ideal for portable equipment.
? VGS(TH) 1.3 V, Low Threshold Levels
? Its modest profile (0.5 mm) enables it to easily fit into ultra-thin environments like portable electronics.
? Logic Level Gate Drive was used, allowing for future migration to lower levels using the same basic topology.