NTMFS4847NAT3G

new-10%

Manufacturer part number:NTMFS4847NAT3G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 11.5A SO-8FL

Case Package:SOT-23

Datasheet:NTMFS4847NAT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	38 Weeks
Lifecycle Status	LIFETIME (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	880mW Ta 48.4W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	17.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.1m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2614pF @ 12V
Current - Continuous Drain (Id) @ 25°C	11.5A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 4.5V
Rise Time	53ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±16V
Fall Time (Typ)	8.7 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	85A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.0062Ohm
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free