NTMFS4921NT1G

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Manufacturer part number:NTMFS4921NT1G

Manufacturer:ON Semiconductor

Description:NTMFS4921NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTMFS4921NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Power Dissipation-Max	870mW Ta 38.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	13.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.95m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 12V
Current - Continuous Drain (Id) @ 25°C	8.8A Ta 58.5A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 11.5V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Turn-Off Delay Time	16.6 ns
Continuous Drain Current (ID)	13.8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.0088A
Drain-source On Resistance-Max	0.0108Ohm
Drain to Source Breakdown Voltage	30V
Height	1.1mm
Length	5.1mm
Width	6.1mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free