NTMFS4927NCT3G

new-10%

Manufacturer part number:NTMFS4927NCT3G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 8SOFL

Case Package:SOT-23

Datasheet:NTMFS4927NCT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Number of Elements	1
Power Dissipation-Max	920mW Ta 20.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	913pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7.9A Ta 38A Tc
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Rise Time	25.5ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.4 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	38A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.9A
Drain-source On Resistance-Max	0.012Ohm
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant