NTMFS4H01NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTMFS4H01NT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Single
Power Dissipation-Max
3.2W Ta 125W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5693pF @ 12V
Current - Continuous Drain (Id) @ 25°C
54A Ta 334A Tc
Gate Charge (Qg) (Max) @ Vgs
85nC @ 10V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
334A
Gate to Source Voltage (Vgs)
20V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,500
$1.00293
$1.00293
NTMFS4H01NT1G Product Details
NTMFS4H01NT1G Description
NTMFS4H01NT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor. Based on its low RDS(on), it is able to minimize conduction losses, and it is capable of minimizing driver losses on the basis of its low capacitance. Due to its superior quality and reliable performance, it is well suited for a wide range of applications, including DC-DC converters, system voltage rails, and more.