STD12NF06LT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD12NF06LT4 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
100mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
12A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD12
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
42.8W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 5V
Rise Time
35ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
48A
Dual Supply Voltage
60V
Nominal Vgs
2 V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2521 items
STD12NF06LT4 Product Details
STD12NF06LT4 Description
The STD12NF06LT4 Power MOSFET was created with STMicroelectronics' proprietary STripFET? technology, which is specifically engineered to reduce input capacitance and gate charge.
STD12NF06LT4 Features
Exceptional dv/dt capability
Low gate charge
STD12NF06LT4 Applications
Switching applications
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