NTR0202PLT1G

new-10%

Manufacturer part number:NTR0202PLT1G

Manufacturer:ON Semiconductor

Description:NTR0202PLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTR0202PLT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	550MOhm
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-400mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	225mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	225mW
Turn On Delay Time	3 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 200mA, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 5V
Current - Continuous Drain (Id) @ 25°C	400mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.18nC @ 10V
Rise Time	6ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	400mA
Threshold Voltage	-1.9V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.4A
Drain to Source Breakdown Voltage	-20V
Height	1.01mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free