NTR3162PT1G

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Manufacturer part number:NTR3162PT1G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 2.2A SOT-23

Case Package:SOT-23

Datasheet:NTR3162PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	480mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.2A Ta
Gate Charge (Qg) (Max) @ Vgs	10.3nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	31 ns
Continuous Drain Current (ID)	2.2A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.07Ohm
Drain to Source Breakdown Voltage	-20V
RoHS Status	RoHS Compliant
Lead Free	Lead Free