NTR3A052PZT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTR3A052PZT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
860mW Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
47m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1243pF @ 4V
Current - Continuous Drain (Id) @ 25°C
3.6A Ta
Gate Charge (Qg) (Max) @ Vgs
11.9nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V
Vgs (Max)
±8V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NTR3A052PZT1G Product Details
NTR3A052PZT1G Description
NTR3A052PZT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor for ultra-low RDS (on) based on advanced trench technology. It is able to provide ?1.8 V rated for low voltage gate drive. Based on its specific characteristics, it is well suited for a power load switch.