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NTR3A052PZT1G

NTR3A052PZT1G

NTR3A052PZT1G

ON Semiconductor

NTR3A052PZT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTR3A052PZT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 860mW Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 47m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1243pF @ 4V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 11.9nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.13335 $0.40005
6,000 $0.12565 $0.7539
15,000 $0.11795 $1.76925
30,000 $0.10871 $3.2613
75,000 $0.10486 $7.8645
NTR3A052PZT1G Product Details

NTR3A052PZT1G Description


NTR3A052PZT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor for ultra-low RDS (on) based on advanced trench technology. It is able to provide ?1.8 V rated for low voltage gate drive. Based on its specific characteristics, it is well suited for a power load switch.



NTR3A052PZT1G Features


  • Low voltage gate drive

  • Low RDS (on)

  • Advanced trench technology

  • Available in the SOT-23 package



NTR3A052PZT1G Applications


  • Power load switch


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