BTS247Z E3062A

new-10%

Manufacturer part number:BTS247Z E3062A

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 33A TO220-5

Case Package:SOT-23

Datasheet:BTS247Z E3062A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TEMPFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	5
JESD-30 Code	R-PSSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	120W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	2V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds	1730pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	33A
Drain-source On Resistance-Max	0.028Ohm
Pulsed Drain Current-Max (IDM)	180A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	1300 mJ
FET Feature	Temperature Sensing Diode
RoHS Status	RoHS Compliant