NTTFS5820NLTWG

new-10%

Manufacturer part number:NTTFS5820NLTWG

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 37A 8DFN

Case Package:SOT-23

Datasheet:NTTFS5820NLTWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Power Dissipation-Max	2.7W Ta 33W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	33W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11.5m Ω @ 8.7A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1462pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Ta 37A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	37A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Height	800μm
Length	3.15mm
Width	3.15mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free