NVB25P06T4G

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Manufacturer part number:NVB25P06T4G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 60V 27.5A D2PAK

Case Package:SOT-23

Datasheet:NVB25P06T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 6 days ago)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	120W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	82m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 25V
Current - Continuous Drain (Id) @ 25°C	27.5A Ta
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Rise Time	72ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Polarity/Channel Type	N-CHANNEL
Fall Time (Typ)	190 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	27.5A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.082Ohm
Pulsed Drain Current-Max (IDM)	80A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	600 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free