SI3424BDV-T1-E3

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Manufacturer part number:SI3424BDV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 8A 6TSOP

Case Package:SOT-23

Datasheet:SI3424BDV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.1W Ta 2.98W Tc
Element Configuration	Single
Power Dissipation	2.1W
Turn On Delay Time	18 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	735pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Rise Time	85ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	735pF
Drain to Source Resistance	28mOhm
Rds On Max	28 mΩ
Nominal Vgs	3 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant