SI4190DY-T1-GE3

new-10%

Manufacturer part number:SI4190DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 20A 8-SOIC

Case Package:SOT-23

Datasheet:SI4190DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Packaging	Cut Tape (CT)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	8.8MOhm
Terminal Finish	PURE MATTE TIN
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Power
Max Power Dissipation	7.8W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	7.8W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 50V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	13ns
Fall Time (Typ)	11 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free