NVB5860NLT4G

new-10%

Manufacturer part number:NVB5860NLT4G

Manufacturer:ON Semiconductor

Description:MOSFET NFET D2PAK 60V 169A 3MOHM

Case Package:SOT-23

Datasheet:NVB5860NLT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	283W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	283W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13216pF @ 25V
Current - Continuous Drain (Id) @ 25°C	220A Ta
Gate Charge (Qg) (Max) @ Vgs	220nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	98 ns
Continuous Drain Current (ID)	220A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	660A
Height	4.83mm
Length	10.29mm
Width	9.65mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free