SUP90N04-3M3P-GE3

new-10%

Manufacturer part number:SUP90N04-3M3P-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 40V 90A TO-220AB

Case Package:SOT-23

Datasheet:SUP90N04-3M3P-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2001
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	3.1W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5286pF @ 20V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	131nC @ 10V
Rise Time	7ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	90A
Threshold Voltage	1V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	40V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant