SI1032X-T1-E3

new-10%

Manufacturer part number:SI1032X-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 200MA SC89-3

Case Package:SOT-23

Datasheet:SI1032X-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Number of Pins	3
Supplier Device Package	SC-89-3
Weight	29.993795mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	5Ohm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	300mW Ta
Element Configuration	Single
Power Dissipation	340mW
Turn On Delay Time	50 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Rise Time	25ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	200mA
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	5Ohm
Rds On Max	5 Ω
Nominal Vgs	700 mV
Height	800μm
Length	1.7mm
Width	950μm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free