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NVD5802NT4G-TB01

NVD5802NT4G-TB01

NVD5802NT4G-TB01

ON Semiconductor

MOSFET N-CH 40V 101A DPAK

SOT-23

NVD5802NT4G-TB01 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 93.75W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 12V
Current - Continuous Drain (Id) @ 25°C 16.4A Ta 101A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant

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