NVD5863NLT4G

new-10%

Manufacturer part number:NVD5863NLT4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 14.9A DPAK-4

Case Package:SOT-23

Datasheet:NVD5863NLT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	27 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 hours ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.1W Ta 96W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	12.8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.1m Ω @ 41A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3850pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14.9A Ta 82A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	24.4ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	37.6 ns
Continuous Drain Current (ID)	82A
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	320 mJ
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free