SI3460DV-T1-GE3

new-10%

Manufacturer part number:SI3460DV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V

Case Package:SOT-23

Datasheet:SI3460DV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	19.986414mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	27m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 1mA (Min)
Current - Continuous Drain (Id) @ 25°C	5.1A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	6.8A
Threshold Voltage	450mV
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.027Ohm
Drain to Source Breakdown Voltage	20V
Nominal Vgs	450 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant