NVD5867NLT4G

new-10%

Manufacturer part number:NVD5867NLT4G

Manufacturer:ON Semiconductor

Description:NVD5867NLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NVD5867NLT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	48 Weeks
Lifecycle Status	LIFETIME (Last Updated: 4 hours ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.3W Ta 43W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.3W
Case Connection	DRAIN
Turn On Delay Time	6.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	39m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	675pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	12.6ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.4 ns
Turn-Off Delay Time	18.2 ns
Continuous Drain Current (ID)	22A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.05Ohm
Pulsed Drain Current-Max (IDM)	85A
DS Breakdown Voltage-Min	60V
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free