IRF7739L2TR1PBF

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IRF7739L2TR1PBF

Manufacturer part number:IRF7739L2TR1PBF

Manufacturer:Infineon Technologies

Description:IRF7739L2TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7739L2TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L8
Number of Pins	8
Supplier Device Package	DIRECTFET L8
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	1MOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	3.8W Ta 125W Tc
Power Dissipation	125W
Turn On Delay Time	21 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1mOhm @ 160A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	46A Ta 375A Tc
Gate Charge (Qg) (Max) @ Vgs	330nC @ 10V
Rise Time	71ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	42 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	46A
Threshold Voltage	2.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Input Capacitance	11.88nF
Recovery Time	130 ns
Drain to Source Resistance	1mOhm
Rds On Max	1 mΩ
Nominal Vgs	2.8 V
Height	508μm
Length	9.144mm
Width	7.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free